Journal article
Stability issues of Cu(In,Ga)Se-2-based solar cells
Journal Of Physical Chemistry B, Vol.104(20), pp.4849-4862
May/2000
Abstract
Stability aspects of the Mo/Cu(In,Ga)Se-2/CdS/ZnO solar cell are reviewed and assessed. These include (i) the chemical stability of the various interfaces present in the device, (ii) the long-term behavior of metastable defects found in the Cu(In,Ga)Se-2 (CIGS) compound, and (iii) the impact of Cu migration on device performance and lifetime. We find that (i) all interfaces within the structure are chemically stable, (ii) metastable defects have a beneficial effect on performance, and (iii) Cu migration effects are reversible and their possible detrimental effects are eclipsed by the beneficial effect of the metastable states. Moreover, Cu out-diffusion from the CIGS layer is absent in photovoltaic-quality CIGS. Finally, we propose a model that explains the exceptional radiation hardness and impurity tolerance of CIGS-based devices, based on the synergetic effect of copper migration and point defect reactions.
Details
- Title
- Stability issues of Cu(In,Ga)Se-2-based solar cells
- Creators
- JF Guillemoles (null)Leeor Kronik (null) - The Weizmann Institute of ScienceDavid Cahen (null) - The Weizmann Institute of ScienceU Rau (null)A Jasenek (null)HW Schock (null)
- Resource Type
- Journal article
- Publication Details
- Journal Of Physical Chemistry B, Vol.104(20), pp.4849-4862; May/2000
- Number of pages
- 14
- Language
- English
- DOI
- https://doi.org/10.1021/jp993143k
- Record Identifier
- 993267248203596
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