Journal article
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Nature Nanotechnology, Vol.12(6), pp.530-+
Jun/2017
Abstract
High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research(1-9). However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present(10). Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of similar to 0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of > 20,000 cm(2) V-1 s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition(11) and at the LaAlO3-SrTiO3 interface(12), making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V-1 s(-1)), large current on/off ratios (> 10(6)) and near-ideal subthreshold swing values (similar to 65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.
Details
- Title
- High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
- Creators
- Jinxiong Wu (null)Hongtao Yuan (null)Mengmeng Meng (null)Cheng Chen (null)Yan Sun (null)Zhuoyu Chen (null)Wenhui Dang (null)Congwei Tan (null)Yujing Liu (null)Jianbo Yin (null)Yubing Zhou (null)Shaoyun Huang (null)H. Q. Xu (null)Yi Cui (null)Harold Y. Hwang (null)Zhongfan Liu (null)Yulin Chen (null)Binghai Yan (null) - The Weizmann Institute of ScienceHailin Peng (null)
- Resource Type
- Journal article
- Publication Details
- Nature Nanotechnology, Vol.12(6), pp.530-+; Jun/2017
- Number of pages
- 6
- Language
- English
- DOI
- https://doi.org/10.1038/NNANO.2017.43
- Grant note
- National Basic Research Program of China [2014CB932500, 2016YFA0200101]; National Natural Science Foundation of China [21525310]; National Program for Support of Top-Notch Young Professionals; Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]_ALMAME_DELIMITER_
- Scientific Unit
- The Weizmann Institute of Science
- Record Identifier
- 993264169403596
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